NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

One Page Summary

Instruction: Click on selected Tab for more information.

As

GaAs

gallium(III) arsenide

CAS Registry No:

1303-00-0

arsenide, II-VI semiconductor, III-V semiconductor

Author Name(s):

Stietz F., Sloboshanin S., Engelhard H., Allinger T., Goldmann A., and Schaefer J.A.

Solid State Commun. 94, 643

Pub Year:

1995

bookAll Records in this Publication

Photoelectron Line

Line Designation:

3d_5/2

Binding Energy (eV):

41.85

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

0.310

Use of X-ray Monochromator:

No

Anode Material:

other source

X-ray Energy:

70

Overall Energy Resolution (eV):

0.3

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-GaAs(100)c(8x2) with a carrier concentration of 1E18 cm-3. The spectra were recorded at normal emission. The sample was cleaned by Ne+ ion bombardment Ep = 500 eV, j = 1microampere cm-2) and annealing (T = 900 K). Branching ratio = 0.67.

chemically etched, crystal, semiconductor, sputtered and heated, wafer

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300

An error has occurred. This application may no longer respond until reloaded. Reload 🗙