NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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P

InP

surface component

indium phosphide

CAS Registry No:

22398-80-7

II-VI semiconductor, III-V semiconductor, phosphide

Author Name(s):

Ottaviani C., Capozi M., Quaresima C., Matteucci M., Crotti C., Perfetti P., et al.

J. Electron Spectrosc. Relat. Phenom. 76, 139

Pub Year:

1995

bookAll Records in this Publication

Surface Core-level Shift

Line Designation:

SS-2p_3/2

Surface Core-Level Shift (eV):

-0.31

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

0.11

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

198

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type and p-type InP(110) with carrier concentrations of 1E15 and 2.9E17 cm-3, respectively. The spectra were recorded at normal emission and 51 degrees. Branching ratio = 0.48.

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