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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
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General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
In
Formula:
InP
Name:
indium phosphide
CAS Registry No:
22398-80-7
Class:
II-VI semiconductor, III-V semiconductor, phosphide
Author Name(s):
Dudzik E., Muller C., McGovern I.T., Lloyd D.R., Patchett A, Zahn D.R.T. et al
Journal:
Surf. Sci. 344, 1
DOI:
10.1016/0039-6028(95)00799-7
Pub Year:
1995
book
All Records in this Publication
Data Type:
Surface Core-level Shift
Line Designation:
SS-4d
Surface Core-Level Shift (eV):
-0.29
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
0.38
Lorentzian Width (eV):
0.18
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
160
Overall Energy Resolution (eV):
0.5
Calibration:
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-InP(110). Branching ratio = 0.70.
Specimen:
cleaved crystal, crystal, semiconductor
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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