NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Si

Si

dimer atoms

silicon

CAS Registry No:

7440-21-3

element, II-VI semiconductor, IV semiconductor

Author Name(s):

Cricenti A., Le Lay G., Aristov V.Y., Nesterenko B., Safta N., Lacharme J.P., et al.

J. Electron Spectrosc. Relat. Phenom. 76, 613

Pub Year:

1995

book All Records in this Publication

Surface Core-level Shift

Line Designation:

SS-2p_3/2

Surface Core-Level Shift (eV):

-0.15

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.45

Lorentzian Width (eV):

0.035

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

151

Overall Energy Resolution (eV):

0.08

Calibration:

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-Si(110)-(16x2) with a carrier concentration of 1E14 cm-3. The sample was outgassed at 773 K and cleaned by heating with direct current (T = 1273 - 1473 K, time = 10 min). Peak locations: Voigt function. Branching ratio = 0.5 The spectra were recorded at normal emission and 55 degrees.

annealed, chemically etched, crystal, semiconductor

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300

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