NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Si

O₂/Si

Si(II) state

oxygen/silicon

CAS Registry No:

7782-44-7

element, IV semiconductor, non-stoichiometric oxide, oxide

Chemical Shift

Line Designation:

CS-2p_3/2

Chemical Shift (eV):

1.80

Energy Uncertainty:

Background Subtraction Method:

Shirley

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.68

Lorentzian Width (eV):

0.1

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

145

Overall Energy Resolution (eV):

0.30

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

n-type P-doped Si(001) and Si(111) surfaces with a resistivity of 0.002 - 0.005 ohm cm were exposed to 90 L O2 at 875 K. The wafer was cleaned by heating (T = 1325 K, time = 15 s). The spectra were recorded at normal emission. The relative intensity was 0.076. Branching ratio = 0.5.

crystal, oxidizing atmosphere, oxygen pressure, thermal oxide, wafer

Method of Determining Specimen Composition:

X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300

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