NIST X-ray Photoelectron Spectroscopy Database

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GaAs

gallium(III) arsenide

1303-00-0

arsenide, II-VI semiconductor, III-V semiconductor

Doublet Separation for Photoelectron Lines

DS-3d

0.45

other

mixed Gaussian/Lorentzian

Anode Material:

other source

X-ray Energy:

100

Overall Energy Resolution (eV):

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

GaAs(311)-(1x1). The sample was cleaned by cycles of Ar+ ion bombardment (Ep = 500 eV) and annealing (T = 550 K). Branching ratio = 0.66.