NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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In

InP

indium phosphide

CAS Registry No:

22398-80-7

II-VI semiconductor, III-V semiconductor, phosphide

Photoelectron Line

Line Designation:

4d_5/2

Binding Energy (eV):

17.50

Energy Uncertainty:

0.1

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

other source

X-ray Energy:

40.8

Overall Energy Resolution (eV):

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type S-doped and p-type Cd-doped InP(100)-(4x2) wafers with a carrier concentration of 1E18 cm-3. The surface was cleaned by hydrofluoric acid ad subsequent cycles of Ne+ ion bombardment (Ep = 550 eV, j = 0.7 microampere cm-2) and annealing (T = 650 K, time = 5 min).The spectra were recorded at normal emission.

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