Anode Material:
other source
Overall Energy Resolution (eV):
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
10 A A/n-type S-doped and p-type Cd-doped InP(100)-(4x2) wafers with a carrier concentration of 1E18 cm-3. The substrate surface was cleaned by hydrofluoric acid ad subsequent cycles of Ne+ ion bombardment (Ep = 550 eV, j = 0.7 microampere cm-2) and annealing (T = 650 K, time = 5 min).The spectra were recorded at normal emission. The thickness was measured using a quartz-crystal thickness monitor.
crystal, reduced, semiconductor, vapor deposited, wafer
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
