NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

One Page Summary

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Element:

Formula:

O₂/Si

Name:

silicon oxides (O2/Si)

CAS Registry No:

11126-22-0

Class:

IV-VI semiconductor, non-stoichiometric oxide, oxide

Author Name(s):

Scholz S.M., Jacobi K.

Journal:

Surf. Sci. 369, 117

DOI:

Pub Year:

1996

book All Records in this Publication

Data Type:

Doublet Separation for Photoelectron Lines

Line Designation:

DS-2p

Double Separation (eV):

0.60

Energy Uncertainty:

Background Subtraction Method:

Linear

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

135

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

100 L O2/Si(113)-(3x1). FAT mode. The spectra were recorded at normal emission and 40 degrees. Branching ratio = 0.52.

Specimen:

oxidizing atmosphere, oxygen pressure, wafer

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300