NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Cd

CdS/In₆Se₇

cadmium sulfide/indium selenide

CAS Registry No:

1306-23-6

chalcogenide, II-VI semiconductor, sulfide

Photoelectron Line

Line Designation:

4d

Binding Energy (eV):

10.00

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

70

Overall Energy Resolution (eV):

0.2

Calibration:

Charge Reference:

Valence band minimum

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

40 A CdS/n-type In6Se7. The substrate with thickness of 480 nm was deposited on GaAs(100) substrate by PVD (T = 773 - 823 K). The spectra were recorded at normal emission. The thickness was measured using a quartz-crystal thickness monitor.

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