NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

One Page Summary

Instruction: Click on selected Tab for more information.

Ga

GaAs

gallium(III) arsenide

CAS Registry No:

1303-00-0

arsenide, II-VI semiconductor, III-V semiconductor

Surface Core-level Shift for the Second Layer of Atoms

Line Designation:

SS1-3d_5/2

Surface Core-Level Shift (eV) for the first Layer of Atoms:

0.51

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

0.10

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

60

Overall Energy Resolution (eV):

0.2

Calibration:

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

p-type Si-doped GaAs(001) with a carrier concentration of 3.5E14 cm-3 was cleaned by Ar+ ion bombardment (Ep = 500 eV) and annealed (T = ~825 K). LEED c(4x4) pattern. The spectra were recorded at normal emission. Branching ratio = 0.65. The bulk component has the same FWHM as the surface components.

crystal, molecular beam epitaxy, semiconductor

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction, Reflection High-Energy Electron Diffraction

Specimen Temperature (K):

300

An error has occurred. This application may no longer respond until reloaded. Reload 🗙