NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 11

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

GaAs

SS-3d_5/2

0.36

GaAs

SS1-3d_5/2

0.53

GaAs

SS1-3d_5/2

0.51

GaAs

SS1-3d_5/2

0.57

GaAs

SS1-3d_5/2

0.45

GaAs

SS1-3d_5/2

0.58

GaAs

SS2-3d_5/2

-0.47

GaAs

SS2-3d_5/2

-0.57

GaAs

SS2-3d_5/2

-0.55

GaAs

SS2-3d_5/2

-0.36

GaAs

SS2-3d_5/2

-0.40

Data Type:

Surface Core-level Shift for the Second Layer of Atoms

Line Designation:

SS1-3d_5/2

Surface Core-Level Shift (eV) for the first Layer of Atoms:

0.58

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

0.10

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

Overall Energy Resolution (eV):

0.2

Calibration:

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

p-type Si-doped GaAs(001) with a carrier concentration of 3.5E14 cm-3 was cleaned by Ar+ ion bombardment (Ep = 500 eV) and annealed (T = ~825 K). LEED c(4x4) pattern. The spectra were recorded at normal emission. Branching ratio = 0.65. The bulk component has the same FWHM as the surface components.

Specimen:

crystal, molecular beam epitaxy, semiconductor

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction, Reflection High-Energy Electron Diffraction

Specimen Temperature (K):

300