NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

One Page Summary

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Element:

SiO₂

silicon dioxide

7631-86-9

anhydride, catalyst, glass, IV semiconductor, IV-VI semiconductor, mineral, oxide

Author Name(s):

Chorasia A.R., Hood S.J., Chopra D.R.

Journal:

J. Vac. Sci. Technol. A 14, 699

DOI:

Pub Year:

1996

book All Records in this Publication

Chemical Shift

CS-AP-1s,KL23L23(1D)

3.80

0.2

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Anode Material:

other anode

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au,Ag,Cu = 84.00,368.27,932.67

Charge Reference:

Element

Energy Scale Evaluation:

Reliable, with two-point correction of energy scale

Comment:

~ 1000 A SiO2/Si. The sample was cleaned by Ar+ ion bombardment (Ep = 3 keV, j = 4 microamperes cm-2, time = 5 min). FAT mode.

Specimen:

insulator, sputtered, thermal oxide, thin film

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300