NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

One Page Summary

Instruction: Click on selected Tab for more information.

Ge

Ge

germanium

CAS Registry No:

7440-56-4

element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor

Author Name(s):

Santoni A., Dhanak V.R., Goldoni A., Sancrotti M., Modesti S.

Europhys. Lett. 34, 275

Pub Year:

1996

book All Records in this Publication

Doublet Separation for Photoelectron Lines

Line Designation:

DS-3d

Double Separation (eV):

0.58

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

45, 75

Overall Energy Resolution (eV):

0.27

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Sb-doped Ge(111)-c(2x8) with a resistivity of 1 ohm cm. The sample was cleaned by cycles of Ar+ ion bombardment and annealing (T = 1100 K). The spectra were recorded at normal emission and 65 degrees. Branching ratios of the bulk and surface states were 0.625 and 0.58, respectively.

crystal, heated, semiconductor

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

1125

An error has occurred. This application may no longer respond until reloaded. Reload 🗙