NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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As

O₃/GaAs

As ₅⁺ charge state in AsOx

ozone/gallium arsenide

CAS Registry No:

arsenide, IV-VI semiconductor, non-stoichiometric oxide

Author Name(s):

Lan W.M., Sodhi R.N.S., Jau S., Ingrey S.

J. Vac. Sci. Technol. A 8, 1899

Pub Year:

1990

book All Records in this Publication

Chemical Shift

Line Designation:

CS-3d_5/2

Chemical Shift (eV):

4.60

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

other type of curve fit

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7=84.00

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

GaAs(100) was exposed to ultraviolet light and ozone for 20 min. The oxide thickness was evaluated as 4 nm. The chemical shift is relative to the pure GaAs

oxidizing atmosphere, oxygen pressure, thin film

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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