element, IV semiconductor, non-stoichiometric oxide, oxide
Himpsel F.J., McFeely F.R., Taleb-Ibrahimi A., Yarmoff J.A., Hollinger G.
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Total Records: 8
Anode Material:
other source
Overall Energy Resolution (eV):
Calibration:
Other, Si2p = 99.34
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
10-30 A SiO2/Si. The films were obtained by oxidizing atomically clean Si surfaces in pure O2. Thickness of the films was determined by ellipsometry and checked with transmission electron microscopy.
oxidizing atmosphere, oxygen pressure, thin film
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
