NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

One Page Summary

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Element:

Formula:

SiO₂/Si

XPS Formula:

SiO*₂/Si

Name:

silicon dioxide/silicon

CAS Registry No:

7631-86-9

Class:

element, IV semiconductor, non-stoichiometric oxide, oxide

Author Name(s):

Cros A., Saoudi R., Hewett C.A., Lau S.S., Hollinger G.

Journal:

J. Appl. Phys. 67, 1826

DOI:

Pub Year:

1990

book All Records in this Publication

Photoelectron Line

532.80

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

1.54

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

0.7

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

High temperature oxidation (1123 K) of Si(100). The thickness was approximately 10 nm as determined by trasmission electron microscopy.

Specimen:

insulator, oxidizing atmosphere, thermal oxide, thin film

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300