Overall Energy Resolution (eV):
Calibration:
Other, Si2p = 99.34
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
0.2 nm Pd/2 nm SiOx/ p-type B-doped Si(111) with a resistivity of 6 ohm cm. Pd was deposited at 100 K. The chemically clean SiOx surface wasprepared by heating the sample (T = 850 K, time = 2min). The thicknesses were measured using a quartz-crystal thick
cooled, multilayer structure, reacted film, thin layer, vapor deposited
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
100
