NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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O

TaSi₂Ox

TaSi₂O*x

tantalum silicon oxides

CAS Registry No:

IV-VI semiconductor, non-stoichiometric oxide

Photoelectron Line

Line Designation:

1s

Binding Energy (eV):

531.10

Energy Uncertainty:

0.2

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

Mg

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au,Cu=84.00,932.67, Pd3d5=335.12

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable, with three-point correction of energy scale

Comment:

Tantalum silicide was deposited on polysilicon on silicon-on-sapphire wafers by cosputtering from a tantalum rich target to a thickness of 200 nm. The stoichiometry of the tantalum silicide was determined by RBS.

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