NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Al

O₂/Al₀.₆Ga₀.₄As

Al₂O₃

oxygen/aluminum gallium arsenide ss

CAS Registry No:

1344-28-1

arsenide, III-V semiconductor, non-stoichiometric oxide, solid solution

Photoelectron Line

Line Designation:

2p

Binding Energy (eV):

74.90

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

other type of curve fit

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

Al

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

1E0-1E9 L O2/Te-doped Al0.6Ga0.4As. The AlGaAs was cleaned by chemical etching in an ammonia solution and by cycles of Ar+ ion bombardment (Ep = 400 eV, Ip = 4 microamperes, time = 30 min) and annealing (T = 670 K, time = 30 min). The energy of oxide sta

oxidizing atmosphere, oxygen pressure, semiconductor, solid sample mounted on tape

Method of Determining Specimen Composition:

Electron-Probe Microanalysis, X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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