Overall Energy Resolution (eV):
                            Charge Reference:
                            Element
Energy Scale Evaluation:
                            Reliable (reported energy within 300 eV of a reference energy)
Comment:
                            2 -100 A Ti/Si(111)-(7x7). The substrate was chemically etched, Ar+ ion sputtered, and annealed (T = 1273 K). The spectra were recorded at normal emission. Branching ratio = 0.52. monitor. The intensity ratio of the Gaussian/Lorentzian components was 70/3
 
                            reacted, semiconductor, thin layer, vapor deposited, wafer
 
                        Method of Determining Specimen Composition:
                            Method of Determining Specimen Crystallinity:
                            Low-energy Electron Diffraction
Specimen Temperature (K):
                            300