Comment:
The sialon was obtained by hot-pressing mixtures in the system Si3N4 and Al2O3.AlN at 2073 K for 1 h at a pressure of 20 MPa under 1 atm N2. The sample was cleaned by Ar+ ion bombardment (Ep = 400 eV, time = 200 s). No Ar+ ion-induced damage to the sample