NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

One Page Summary

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Element:

AlSb

aluminum stibnide

25152-52-7

III-V semiconductor, stibnide

Author Name(s):

Waldrop J.R., Sullivan G.J., Grant R.W., Kraut E.A., Harrison W.A.

Journal:

J. Vac. Sci. Technol. B 10, 1773

DOI:

Pub Year:

1992

book All Records in this Publication

Photoelectron Line

4d_5/2

31.60

0.03

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Valence band minimum

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

The epitaxial layers were grown on bulk GaSb(001) substrates at 773 K.

Specimen:

crystal, molecular beam epitaxy, semiconductor

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300