NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Si

SiO₂/Si

SiO₂/Si*

silicon dioxide/silicon

CAS Registry No:

7631-86-9

element, IV semiconductor, non-stoichiometric oxide, oxide

Author Name(s):

Sarapatka T.J.

J. Electron Spectrosc. Relat. Phenom. 58, 233

Pub Year:

1992

book All Records in this Publication

Photoelectron Line

Line Designation:

2p

Binding Energy (eV):

99.92

Energy Uncertainty:

0.05

Background Subtraction Method:

Linear

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

Al

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

17 A SiO2/n-type P-doped Si(110) wafer with a carrier concentration of ~5E17 cm-3. The oxide was formed by heating the wafer to 1000 K in 7E4Pa of O2 for 15 min. The substrate was cleaned by Ar+ ion bombardment followed or not annealing (T = 1000 +- 50 K

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