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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
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General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
Si
Formula:
Si
Name:
silicon
CAS Registry No:
7440-21-3
Class:
element, II-VI semiconductor, IV semiconductor
Author Name(s):
Saliman S., Delfino M.
Journal:
J. Appl. Phys. 70, 3970
DOI:
10.1063/1.349160
Pub Year:
1991
book
All Records in this Publication
Data Type:
Photoelectron Line
Line Designation:
2p
3/2
Binding Energy (eV):
99.20
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
Gaussian
Full Width at Half-maximum Intensity (eV):
0.8
Gaussian Width (eV):
Lorentzian Width (eV):
Use of X-ray Monochromator:
No
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au4f7 = 84.00
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
Pure Si after Ar plasma bombardment (Ep = 100 eV) of a native oxide of B-doped Si(100) with a resistivity of 1.5 - 5 ohm cm. Emission angle = 55 degrees.
Specimen:
sputtered
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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