NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

One Page Summary

Instruction: Click on selected Tab for more information.

Si

Si/GaAsOx/GaAs

SiO₂

silicon/gallium arsenide oxides/gallium arsenide

CAS Registry No:

arsenic, arsenide, element, III-V semiconductor, non-stoichiometric oxide, oxide

Author Name(s):

Cuberes M.T., Sacedon J.L.

Surf. Sci. 251, 92

Pub Year:

1991

book All Records in this Publication

Chemical Shift

Line Designation:

CS-2p

Chemical Shift (eV):

3.40

Energy Uncertainty:

Background Subtraction Method:

Shirley

Peak Location Method:

other type of curve fit

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

Mg

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

1.6, 3.2 and 4 - 10 A Si/5.2 A GaAsOx/Si-doped GaAs(100). GaAsOx was grown by electron stimulated oxidation on GaAs(100). There was a state of pure Si in the spectrum. The thickness was measured by XPS.

multilayer structure, oxidizing atmosphere, thin layer, vapor deposited

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

An error has occurred. This application may no longer respond until reloaded. Reload 🗙