NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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As

GaAs₁.₄O₄.₁

As(III) state

gallium arsenic oxide (GaAs1.4O4.1)

CAS Registry No:

arsenic, non-stoichiometric oxide, oxide

Author Name(s):

Hollinger G., Skheyta - Kabbani R., Gendry M.

Phys. Rev. B 49, 11159

Pub Year:

1994

book All Records in this Publication

Chemical Shift

Line Designation:

CS-3d

Chemical Shift (eV):

2.93

Energy Uncertainty:

0.3

Background Subtraction Method:

other

Peak Location Method:

other type of curve fit

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

Al

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au,Ag = 84.00,368.27

Charge Reference:

Adventitious carbon

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

Ultraviolet oxidation in ozone atmosphere at 300 K for 3 h. The intensity ratio of As(V)/As(III) components was 1.02. The oxide thickness measured by XPS was 27 A. The interfacial As layer thickness was 2.0 A. The chemical shift is relative to the substrate atoms.

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