NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Mo

MoSi₂

molybdenum disilicide

CAS Registry No:

12136-78-6

IV-VI semiconductor, silicide

Surface Core-level Shift

Line Designation:

SS-4p

Surface Core-Level Shift (eV):

0.00

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.9

Lorentzian Width (eV):

0.4

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

Overall Energy Resolution (eV):

1.0

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

MoSi2(110)-(1x1) and MoSi2(001)-(1x1). The single-crystal was grown in a floating-zone in a He atmosphere (pressure = 1 MPa). The sample was cleaned by ion bombardment (time = 10 min) and subsequently annealed (T = 1373 K). Asymmetry parameter = 0.07. Branching ratio = 0.4.

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