NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Ga

GaAs/Y

gallium arsenide/yttrium

CAS Registry No:

1303-00-0

arsenide, III-V semiconductor

Author Name(s):

Mesarwi A., Ignatiev A.

Surf. Sci. 282, 371

Pub Year:

1993

book All Records in this Publication

Photoelectron Line

Line Designation:

3d

Binding Energy (eV):

18.00

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

0.8 ML Y/GaAs(100). n-type Si-doped GaAs with a carrier concentration of 1E16 cm-3. The substrate was cleaned by Ar+ ion bombardment (Ep = 1 keV, j = 10 microamperes/cm2, time = 30 min) and subsequently annealed (T = 723 K, time = 15 min) by indirect ele

reacted, surface coverage from 0ML to 1ML (0ML < coverage < 1ML), thin layer, vapor deposited

Method of Determining Specimen Composition:

X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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