NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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As

O₂/Y/GaAs

oxidized GaAs

oxygen/yttrium/gallium arsenide

CAS Registry No:

arsenide, III-V semiconductor, non-stoichiometric oxide, oxide

Author Name(s):

Mesarwi A., Ignatiev A.

Surf. Sci. 282, 371

Pub Year:

1993

book All Records in this Publication

Chemical Shift

Line Designation:

CS-3d

Chemical Shift (eV):

3.50

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

1E13 L O2 were adsorbed onto 3 ML Y/GaAs(100) at 673 K. The energy is referenced to the bulk state of the As3d line. The substrate was cleaned by Ar+ ion bombardment (Ep = 1 keV) and annealing (T = 723 K).

multilayer structure, oxidizing atmosphere, oxygen pressure, vapor deposited

Method of Determining Specimen Composition:

X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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