NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Zn

ZnTe/AlSb

zinc telluride/aluminum stibnide

CAS Registry No:

1315-11-3

chalcogenide, II-VI semiconductor, telluride

Author Name(s):

Yu E.T., Phillips M.C., Chow D.H., Collins D.A., Wang M.W., McCaldin J.O., et al.

Phys. Rev. B 46, 13379

Pub Year:

1992

book All Records in this Publication

Photoelectron Line

Line Designation:

3d

Binding Energy (eV):

9.42

Energy Uncertainty:

0.04

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

Al

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Valence band minimum

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

25 A ZnTe/5000 A AlSb/p-type GaSb(100) with a carrier concentration of 1E17 cm-3. The AlSb film was deposited at the substrate temperature of 803 K. The ZnTe layers were grown at either 543 K or 603 K. Peak locations: Voigt function.

molecular beam epitaxy, semiconductor, thin film

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Reflection High-Energy Electron Diffraction

Specimen Temperature (K):

300

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