NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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In

In₂Se₃

diindium triselenide

CAS Registry No:

12056-07-4

chalcogenide, II-VI semiconductor, selenide

Author Name(s):

Nelson A.J., Swartzlander A.B., Tuttle J.R., Noufi R., Patel R., and Hochst H.

J. Appl. Phys. 74, 5757

Pub Year:

1993

book All Records in this Publication

Photoelectron Line

Line Designation:

4d_3/2

Binding Energy (eV):

18.00

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

other source

X-ray Energy:

70, 100

Overall Energy Resolution (eV):

0.2

Calibration:

Charge Reference:

Valence band minimum

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

200 nm n-type In2Se3/700 - 900 nm CuIn3Se5/CuInSe2. The sample was cleaned by Ar+ ion bombardment (Ep = 500 eV, angle of incidence = 30 degrees). The spectra were recorded at normal emission.

polycrystalline, semiconductor, sputtered in argon, thick film, vapor deposited

Method of Determining Specimen Composition:

Electron-Probe Microanalysis

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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