Reliable (reported energy within 300 eV of a reference energy)
Comment:
MoSi2(110)-(1x1). The single-crystal was grown in a floating-zone growth mode in a He atmosphere with a pressure of 1 MPa. The crystal was cleaned by ion bombardment (time = 10 min) and subsequently annealed (T = 1173 K). Branching ratio = 0.5. Asymmetry parameter = 0.03.