NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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B

O₂/B/TaB₁.₉₄/Ta

oxide state

oxygen/boron/tantalum diboride/tantalum

CAS Registry No:

7440-42-8

element, oxide

Photoelectron Line

Line Designation:

1s

Binding Energy (eV):

193.40

Energy Uncertainty:

Background Subtraction Method:

Linear

Peak Location Method:

Gaussian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

Mg

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Ag3d5 = 368.27

Charge Reference:

Ag

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

1E4 L O2 were adsorbed onto B/TaB1.94/Ta(110) at 1000 K. The boron thin film was grown at 650 -700 K. The B2H6/Ar mixture was used. The film was annealed to 1000 K. TaB2 was prepared by thermal decomposition of B2H6. FAT mode. The substrate was cleaned by Ar+ ion bombardment and annealing to 2700 K. FAT mode.

chemical vapor deposition, heated and cooled, multilayer structure, oxidizing atmosphere, oxygen pressure

Method of Determining Specimen Composition:

X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

X-ray Diffraction

Specimen Temperature (K):

300

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