Overall Energy Resolution (eV):
Calibration:
Ag3d5 = 368.27
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
B/TaB1.94/Ta(110). The boron thin film was grown at 650 -700 K and annealed to 1000 K. The B2H6/Ar mixture was used. TaB2 was prepared by thermal decomposition of B2H6. FAT mode. The substrate was cleaned by cycles of Ar+ ion bombardment (Ep = 2 keV, Ip = 8 - 10 microamperes) and annealing (T = 2700 K). FAT mode.
chemical vapor deposition, heated and cooled, multilayer structure, thin film, vapor deposited and heated
Method of Determining Specimen Composition:
X-ray Photoelectron Spectroscopy
Method of Determining Specimen Crystallinity:
X-ray Diffraction
Specimen Temperature (K):
300
